Method of controlling electrostatic lens and ion implantation apparatus

ABSTRACT

The ion implantation apparatus deals with an ion beam as a charged particle beam and has an accelerating tube  8  incorporating an electrostatic lens for converging/diverging it. The control of the electrostatic lens is carried out as follows. The swept ion beam  4  is received by a single Faraday cup  46  to measure the beam quantity I(n) and the beam width WD(p) of the ion beam  4 . The evaluated values of the beam quantity and beam width with respect to prescribed standards are calculated. These evaluated values are assigned weights to calculate a unified evaluated value. The focusing voltage Vf applied to the electrostatic lens with the accelerating tube  8  is controlled so that the unified evaluated value is increased. A waveform shaping controller  50  and beam controller  54  constitute a device for making such control.

This is a continuation of application Ser. No. 09/708,488, filed Nov. 9,2000, now U.S. Pat. No. 6,614,027 which is incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a method of controlling an electrostatic lens,which is used in an apparatus which converges/diverges a chargedparticle beam such as an ion beam, electron beam, etc. by anelectrostatic lens and sweep it in an electromagnetic field to beapplied onto an object-to-be-irradiated (e.g. an ion implantationapparatus and an electron microscope), and such an ion implantationapparatus for performing the controlling method. More particularly, thisinvention relates to a means for preventing the beam current of theswept charged particle beam from becoming smaller than before control bythe electrostatic lens by performing the control taking the size of thecharged particle beam in a scanning direction in consideration.

2. Description of the Related Art

An ion beam is one of charged particle beams. FIG. 4 shows an example ofan ion implantation apparatus equipped with an electrostatic lens forconverging or diverging the ion beam. FIG. 5 shows an enlarged main partthereof.

The ion implantation apparatus as shown is basically the same as thatdisclosed in Japanese Patent Unexamined Publication No. Hei. 8-115701(JP-A-8-115701), and is directed to a so-called hybrid parallel scanningsystem which sweeps an ion beam in reciprocation/parallel in anX-direction (e.g. horizontal direction) and drives anobject-to-be-irradiated (e.g. wafer) 22 in reciprocation in a Ydirection (e.g. vertical direction) substantially orthogonal to the Xdirection.

The ion implantation apparatus includes an ion source 2 for deriving theion beam 4, a mass analysis magnet 6 for selectively acquiring aspecific ion species from the ion beam 4 derived from the ion source 2,an accelerating tube 8 for accelerating or decelerating the ion beam 4acquired from the mass analysis magnet 6, a trimming Q lens 10 forremoving the unnecessary part of the ion beam acquired from theaccelerating tube 8, an energy analysis magnet 12 for selectivelyacquiring an ion with specific energy from the ion beam 4 derived fromthe trimming Q lens 10, a sweeping magnet 14 for sweeping the ion beam 4derived from the energy analysis magnet 12 in the X direction by amagnetic field in this example, and a paralleling magnet 16 for bendingthe ion beam 4 derived from the sweeping magnet 14 again toparallel-sweep the ion beam 4 in cooperation with the sweeping magnet14, i.e. making a parallel ion beam 4.

The ion beam 4 derived from the paralleling magnet 16 is applied to theobject-to-be-irradiated 22 held in a holder 20 of a scanning mechanism18 and ions are implanted into the object-to-be-irradiated 22. In thiscase, the object-to-be-irradiated 22 is driven reciprocatively in the Ydirection by the scanning mechanism 18. Cooperation of the reciprocatingdriving of the object-to-be-irradiated 22 and sweeping of the ion beam 4realizes uniform ion implantation into the entire surface of theobject-to-be-irradiated 22.

As shown in FIG. 5, upstream and downstream of theobject-to-be-irradiated 22, a front Faraday unit 36 and a back Faradayunit 44 are arranged for measurement of the ion beam 4 and shaping ofthe sweeping waveform thereof. The front Faraday unit 36 includes afront Faraday array 38 consisting of a plurality of Faraday cups 40aligned in the X direction which is the scanning direction of the ionbeam 4. A back Faraday array 44 consists of a plurality of Faraday cups46 aligned in the X direction. It should be noted that the front Faradayunit 36 is vertically moved to positions which correspond to the ionimplantation into the object-to-be-irradiated 22 and the measurement bythe front Faraday array 38, respectively. At the time of measurement bythe back Faraday array, the holder 20 is moved out of the way.

The front Faraday array 38 and back Faraday array 44 are basically thesame as those disclosed in Japanese Patent Unexamined Publication No.Hei. 9-55179 (JP-A-9-55179). The beam currents measured by theseelements are taken into a waveform shaping controller 50 via a currenttransducer 48 which is a current measuring means. The waveform shapingcontroller 50, for example, performs the same control as disclosed ine.g. the above JP-A-9-55179. Namely, in short, the waveform shapingcontroller 50 creates a sweeping signal S(t) which causes the sweepingspeed of the ion beam 4 on the object-to-be-irradiated 22 to approach aconstant value. This signal is a function of time t. A sweeping powersource 52 amplifies a sweeping signal S(t) into a sweeping current J(t),the sweeping current J(t) is supplied to the sweeping magnet 14 for itsdriving. In the present invention, it is to be understood that variouschanges and modifications may be made without restricting to the abovecontrol of JP-A-9-55179.

Meanwhile, it is necessary to implant the object-to-be-irradiated 22with ions having desired energy and belonging to desired species by adesired quantity at substantially prescribed ion-implanting time.

The ion species are selected using the above mass analysis magnet 6 andenergy analysis magnet 12. The ion energy is determined using a powersource (not shown) for the ion source 2 and/or anacceleration/deceleration power source (acceleration/deceleration powersource 32 in FIG. 6) for the accelerating tube 8. The quantity of ionimplantation is controlled using the current value of the swept beam(current value of the swept ion beam 4) measured by a dose Faraday 42attached to the front Faraday unit 36.

In order to carry out the ion implantation processing at a scheduledimplanting time, the swept-beam current value of the ion beam which isto be applied to the object-to-be-irradiated 22 must be set at aprescribed value calculated from a necessary quantity of implantationand a scheduled implanting time.

A means for realizing this is a technique of controlling anelectrostatic lens for converging/diverging a charged particle beam (ionbeam 4 in the example) by an electric field or magnetic field.Generally, such an electrostatic lens is used to increase the swept beamcurrent obtained at the position of the object-to-be-irradiated.

In this example, the electrostatic lens incorporated in the acceleratingtube 8 is controlled. This technique will be mainly explained below.Incidentally, the technique of controlling the trimming Q lens 10 whichis a four-pole type magnetic lens can be adopted.

The accelerating tube 8 shown in FIG. 6 is basically the same as thatdisclosed in Japanese Patent Unexamined Publication No. Hei. 8-273895(JP-A-8-273895). The accelerating tube 8 is directed to a two-gapthree-pole type. The accelerating tube 8 has a structure in which a highvoltage side electrode 26 and ground side electrode 28 are arrangedwithin an insulator 24 and a focusing electrode 30 is arranged betweenboth electrodes 26 and 28. A voltage for acceleration or deceleration isapplied between both electrodes 26 and 28 from anacceleration/deceleration power source 32. A focusing voltage Vf isapplied between the high voltage side electrode 26 and the focusingelectrode 30 from the focusing power source 34. Both power sources 32and 34 can control the output voltage individually and independently.The electric field created among the three electrodes 26, 30 and 28serves as an electrostatic lens for converging or diverging the ion beam4. Therefore, an electrostatic lens is incorporated in the acceleratingtube 8.

Mainly referring to FIG. 5, an explanation will be given of aconventional method of increasing the swept beam current obtained at aposition of the object-to-be-irradiated 22 in such a manner ofcontrolling the electrostatic lens incorporated in the accelerating tube8.

All the plurality (e.g. 11) of the Faraday caps 46 constituting the backFaraday 44 are connected in parallel to the current transducer 48. Inthis state, the focusing voltage Vf which is an output from the focusingpower source 34 is varied to alter the potential of the focusingelectrode 30. Therefore, the status of converging or diverging of theion beam 4 at the electrostatic lens within the accelerating tube 8 ischanged and thereby the rate of the ion beam 4 lost duringtransportation is also changed. Thus, the relationship between the beamcurrent measured by the current transducer 48 and the focusing voltageVf exhibits a hill shape as shown in FIG. 7. In this case, a focusingvoltage Vf_(max) giving the maximum beam current is selected as asolution and the focusing voltage Vf is set at this value. Thus, thecontrol is completed.

In the control method as described above, by varying the focusingvoltage Vf, (1) the rate of the ion beam 4 lost during thetransportation varies so that the beam current at the position of theobject-to-be-irradiated varies and (2) the diverging angle of the ionbeam after having passed the electrostatic lens varies so that the size(geometrical size) of the ion beam 4 at the position of theobject-to-be-irradiated 22 also varies.

The purpose of controlling the focusing voltage Vf is to acquire a largequantity of swept beam current at the position of theobject-to-be-irradiated 22. If the effect obtained by the varying thefocusing voltage Vf resides in only the above item (1), the abovecontrol method can achieve this purpose.

However, actually, the effect of (2) occurs simultaneously. Therefore,in the above control method, as a result of controlling the focusingvoltage Vf, there is a possibility of the following case. That is, thesize of the ion beam 4 at the position of the object-to-be-irradiated 22varies so that the area to be swept by the ion beam 4 is also increased.As a result, contrary to the purpose, the swept beam current at theposition of the object-to-be-irradiated 22 may become less than thatbefore control. This will be explained in detail below.

The area to be swept by the ion beam 4 depends on the size of theobject-to-be-irradiated 22 and the size of the ion beam 4. Now it isassumed that the spot shape of the ion beam 4 (i.e. sectional shape ofthe ion beam 4 before being swept) is a circle having a diameter d andthat of the object-to-be-irradiated 22 is a circle having a diameter D.In order to make ion-implantation for the entire surface of theobject-to-be-irradiated 22, the ion beam 4 must start from the state Awhere the ion beam 4 is not applied to the object-to-be-irradiated 22 toapproach the object-to-be-irradiated 22, cross the surface of theobject-to-be-irradiated 22, and finally reach the state B where the ionbeam 4 is not entirely applied to the object-to-be-irradiated 22. In thereturn, the ion beam 4 must move similarly in the opposite direction.Generally, an over sweep quantity α is set so that the above movementcan be assured even if the size of the ion beam 4 varies and theobject-to-be-irradiated 22 slightly deviates from its right position.

Therefore, the width W to be swept by the ion beam 4 can be expressed bythe following equation. Namely, as the spot diameter d of the ion beam 4increases, the width W increases.

W=D+2α+d  (1)

If the sweeping width actually by the ion beam 4 exceeds the valuerepresented by Equation (1), the rate of the ion beam which is notapplied to the object-to-be-irradiated 22 but wasted increases.Inversely, if it is too small, the ion beam 4 is not applied onto a partof the object-to-be-irradiated. Both are not desired. Therefore, afterthe operation which may vary the diameter d of the ion beam 4 during itsset-up has been carried out, whether or not the present swept areasatisfies Equation (1) is checked (this is referred to as “over-sweepcheck”, and if necessary readjustment of the swept length (this isreferred to as “sweep adjustment”) is carried out.

However, when the sweeping width by the ion beam as a result of thesweep adjustment varies, the swept beam current varies. The reasontherefor will be explained below.

The swept beam current means the quantity of charges Q which has entereda certain region for a unit time during scanning the ion beam 4.Generally, the quantity of charges Q which has entered any Faraday cup(e.g. any of the Faraday cups 46 shown in FIG. 5) for a unit time istaken as the swept beam current in the Faraday cup. However, now, inorder to simplify the issue, the swept beam current at theobject-to-be-irradiated 22 will be thought about.

A seen from FIG. 8, if the oversweep quantity α is assured sufficiently,the quantity of charges Q which enters the object-to-be-irradiated 22per one sweeping (one round trip) of the ion beam 4 can be expressedusing a spot beam current I_(sp) by the following equation. Now assumingthat t is a time while the ion beam is applied to theobject-to-be-irradiated 22 during its half sweeping(one way) and thesweeping speed of the ion beam is v, t=D/v.

Q=I _(sp)×2t  (2)

In the apparatus described in this embodiment, the sweeping frequency ofthe ion beam 4 is always fixed to a constant value regardless with thesweeping width thereof. Therefore, the sweeping speed v of the ion beam4 is a function of the sweeping width (swept area). Concretely, it canbe expressed by the following Equation. It is assumed that t_(sw) is atime required for one sweeping (one round trip) and takes a certainprescribed time.

v=2W/t _(sw)  (3)

The swept beam current I for the object-to-be-irradiated 22, which is avalue obtained when the quantity of charges Q which enters theobject-to-be-irradiated 22 per one scanning is divided by the timerequired for the one scanning, can be expressed by $\begin{matrix}\begin{matrix}{I = {Q/t_{sw}}} \\{= {I_{sp} \times 2{\left\{ {D/\left( {2{W/t_{sw}}} \right)} \right\}/t_{sw}}}} \\{= {I_{sp} \times {D/W}}} \\{= {I_{sp} \times {D/\left( {D + {2\quad \alpha} + d} \right)}}}\end{matrix} & (4)\end{matrix}$

In Equation 4, any other amount than d is a constant. Therefore, incomparison in the states where Equation (1) is satisfied, as the beamdiameter d increases, the swept beam current I for theobject-to-be-irradiated 22 decreases.

Using these relationships, as a result that control of the focusingvoltage and the subsequent sweep adjustment have been carried out, thecondition for making the swept beam current I larger than that beforecontrol can be acquired.

The swept beam current I before the control can be expressed from thefollowing Equation (5), and the swept beam current I′ after the controlcan be expressed by the following Equation (6). After the control hasbeen carried out, the spot beam current I_(sp) varies by the action ofthe above item (1). The elements which will vary are appended with adash symbol (′).

I=I _(sp) ×D/(D+2α+d)  (5)

I′=I _(sp) ′×D/(D+2α+d′)  (6)

Thus, it can be understood that the condition for making I′/I>1 is thefollowing Equation (7)

(Isp′/Isp)>{(D+2α+d′)/(D+2α+d)}  (7)

However, actually, Equation (7) cannot be necessarily satisfied. Also,it is not possible to know before the control whether or not Equation(7) will be satisfied. Therefore, as a result that the control of thefocusing voltage and the subsequent sweep adjustment have been carriedout, it happens that the swept beam current at theobject-to-be-irradiated 22 becomes smaller than that before the focusingvoltage control is made. In this case, although it was a purpose toobtain a large quantity of swept beam current at theobject-to-be-irradiated 22, the purpose cannot be attained. It can besaid that the control has ended in failure.

SUMMARY OF THE INVENTION

In view of the above circumstance, this invention mainly intends toprovide a method and apparatus capable of preventing the beam current ofa swept charged particle beam from becoming smaller than before controlby the electrostatic lens by performing the control taking the size ofthe charged particle beam in a sweeping direction into consideration.

The method of controlling an electrostatic lens according to theinvention is characterized by receiving a swept charged particle beam bya Faraday cup to measure a beam quantity of the charged particle beamand a beam width thereof in its sweeping direction; calculating theirevaluated values with respect to their prescribed standards; assigningweights to said evaluated values to calculate their unified evaluatedvalue; and controlling said electrostatic lens so that said unifiedevaluated value is increased.

The unified evaluated value is affected by not only the evaluated valueof the beam quantity of the charged particle beam but also the evaluatedvalue of the beam width which is the size in the direction of sweepingthe charged particle beam. Therefore, by controlling the electrostaticlens within the accelerating tube so that the unified evaluated value isincreased, both of the beam current of the swept charged particle beamand the size of the charged particle beam in the sweeping direction canbe approximated to their preferable state. As a result, it is possibleto prevent the beam current of the charged particle beam from becomingsmaller than that before the control of the electrostatic lens.

The ion implantation apparatus according to the invention ischaracterized in that it comprises a Faraday cup for receiving saidswept ion beam, and a controller for controlling said electrostatic lenson the basis of a measured signal sent from the Faraday cup, and in thatsaid controller has functions of: measuring a beam quantity of the ionbeam and a beam width thereof in its sweeping direction at the positionof the Faraday cup; calculating their evaluated values with respect totheir prescribed standards; assigning weights to said evaluated valuesto calculate the unified evaluated value which unifying their evaluatedvalue; and controlling said electrostatic lens so that said unifiedevaluated value is increased.

Since the ion implantation apparatus comprises a controlling devicehaving a function of implementing the method of controlling anelectrostatic lens and the Faraday cap, it is possible to prevent thebeam current of the swept ion beam from becoming smaller than thatbefore the control of the electrostatic lens. Thus, the purpose ofacquiring the large swept beam current can be attained more surely.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view showing the main part of an example of the ionimplantation apparatus for carrying out the control method according tothe invention;

FIG. 2 is a flowchart showing an example of the control method accordingto the invention;

FIG. 3 is a view showing an example of a beam waveform;

FIG. 4 is a schematic plan view showing an example of a conventional ionimplantation apparatus;

FIG. 5 is a view showing the main part of an example of a conventionalion implantation apparatus;

FIG. 6 is a sectional view showing an example of an accelerating tubehaving an electrostatic lens in FIGS. 1, 4 and 5;

FIG. 7 is a view showing an example of the relationship between afocusing voltage and a beam current; and

FIG. 8 is a view for explaining the necessary sweeping width of a beam.

DETAILED DESCRIPTION OF THE PREFERED EMBODIMENT

FIG. 1 is a view showing the main part of an example of theion-implantation apparatus for carrying out the control method accordingto the invention. The entire arrangement of the ion-implantationapparatus is such as shown in FIG. 4. Therefore, referring to thisfigure and the description relative thereto, the explanation will not berepeated. In the following description, like reference symbols refer tolike or corresponding parts in the conventional art shown in FIGS. 4 to6. A difference between the invention and the conventional art will bemainly explained below.

First, a brief explanation will be given of the difference of theconfiguration of FIG. 1 from that of FIG. 5. In the ion implantationapparatus shown in FIG. 1, the waveform shaping controller 50 has alsothe function of measuring the beam quantity I(n) and beam width Wd(p). Abeam controller 54 is also provided for controlling the focusing voltageVf from the focusing power source 34 (i.e. controlling the electrostaticlens incorporated in the accelerating tube 8) on the basis of the beamquantity I(n) and beam width Wd(p).

In this example, both of the waveform shaping controller 50 and beamcontroller 54 constitute the controlling apparatus for controlling theelectrostatic lens incorporated in the accelerating tube 8. However,both controllers may be integrated to constitute the controllingapparatus, and only the beam controller 54 can be used to constitute thecontrolling apparatus.

Now also referring to the flowchart of FIG. 2, a detailed explanationwill be given of a method of controlling the electrostatic lensincorporated in the accelerating tube 8 using the above waveform shapingcontroller 50 and beam controller 54, etc.

A focusing voltage Vf (kV)which is an output from the focusing powersource 34 will be varied from Vf(0) to Vf(m) in steps of{Vf(m)−Vf(0)}/(m) (m is an integer not smaller than 1), in a state whereone (e.g. located centrally) of the plurality (e.g. 11) of Faraday cups46 constituting the back Faraday array 44 is connected to the currenttransducer 48 (this state is referred to as “back center”). In thisstate, while the ion beam 4 is swept (referred to “back center sweep”),(1) the beam quantity of the ion beam 4 and (2) the beam width of theion beam 4 will be measured.

(1) As regards the beam quantity

At a certain focusing voltage Vf (n), the beam quantity I(n) in the“back center sweep” is measured and stored (step 100 in FIG. 2). In thisexample, this will be carried out by the waveform shaping controller 50,and the measured data I(n) is supplied to the beam controller 54. Thebeam quantity I(n) is an integrated value of the beam currentinstantaneous value of the beam waveform as shown in FIG. 3 and isrepresented by a quantity of charges. Symbol n denotes an integer of0≦n≦m. This measurement is carried out by varying the focusing voltageVf from Vf(0) to Vf (m) in steps of {Vf (m)−Vf (0)}/(m). Therefore, thearrangement I(n) has (m+1) elements from n=0 to n=m.

Assuming that the largest value in the elements of I(n) is I_(max), theevaluated value RI(n) of the beam quantity is acquired from thefollowing equation (step 101). In this example, this will be carried outby the beam controller 54. RI(n), which is a relative representation ofIn, is an arrangement having the size equal to that of I(n).

RI(n)=I(n)/I _(max)  (8)

(2) As regards the beam width

At a focusing voltage Vf(n), H is taken as the simple peak height of thebeam waveform as shown in FIG. 3 which is acquired by the “back centersweep”. The width of the beam waveform is measured in different p (p isan integer not smaller than 1) heights. The beam widths measured at theheights of pH/(p+1), (p−1)H/(p+1), . . . , 2H/(p+1), H/(p+1) arereferred to Wd(1), Wd(2), . . . Wd(p) (step 102). In this example, thiswill be carried out by the waveform shaping controller 50, and themeasured data Wd(p) is supplied to the beam controller 54. FIG. 3 showsan example in the case of p=5.

On the other hand, the ideal values of beam width at the heights ofpH/(p+1), (p−1)H/(p+1), . . . , 2H/(p+1), H/(p+1) are referred toWdi(1), Wdi(2), . . . Wdi(p). Setting of the ideal values may be variedaccording to a purpose of use.

However, the height and width of the above beam does not represent thegeometrical height and width of the beam spot of the actual ion beam 4.Namely, the beam waveform shown in FIG. 3 is illustrated as a beamcurrent instantaneous value in the vertical axis and the above sweepingsignal S(t) in the horizontal axis. Therefore, the beam height nowreferred to is the beam current instantaneous value and the width ateach of the heights reflects the geometrical width of the beam spot.Namely, the smaller the geometrical width of the beam spot is, thesmaller the width at each of the heights is.

Next, the deviation ΔWd (q) of the beam width at each height from itsideal value is acquired from the following equation (step 103)). Symbolq is an integer of 1≦q≦p. Quantity ΔWd(q) is a zero or negative value.In this example, the processing and control from then will be entirelycarried out by the beam controller 54.

ΔWd(q)=Wdi(q)−Wd(q)  (9)

(where if Wdi (q)≧Wd (q), ΔWd(q) is set to 0.)

The quantity ΔW (n) which represents the deviation of the beam width ata certain focusing voltage Vf(n) is acquired from the following equation(step 104). Since the quantity ΔWd (q) is zero or negative, the quantityΔW (n) is also a zero or negative value. $\begin{matrix}\begin{matrix}{{\Delta \quad {W(n)}} = {{\left\{ {p/\left( {p + 1} \right)} \right\} \times \Delta \quad {{Wd}(1)}} +}} \\{{{\left\{ {\left( {p - 1} \right)/\left( {p + 1} \right)} \right\} \times \Delta \quad {{Wd}(2)}} + \ldots +}} \\{{\left\{ {1/\left( {p + 1} \right)} \right\} \times \Delta \quad {{Wd}(p)}}}\end{matrix} & (10)\end{matrix}$

Equation (10) means that the beam waveform as shown in FIG. 3 is givenheavy weight at the point closer to the peak where the current value islarger.

Assuming that the largest absolute value of the elements of ΔW(n) isΔW_(max), the evaluated value RΔW(n) of the beam width is acquired bythe following equation (step 105). The quantity RΔW(n) is a relativerepresentation of ΔW(n), and also an arrangement having the same size asthat of ΔW(n). Since the quantity ΔW(n) is zero or negative, RΔW(n) isalso zero or a negative value.

RΔW(n)=ΔW(n)/ΔW _(max)  (11)

(3) Unified evaluation of the beam and control of the focusing voltage

Using the evaluated value RI(n) of the beam quantity and the evaluatedvalue RΔW(n) of the beam width, the unified evaluated value SVf (n) ofthe beam at a certain focusing voltage Vf(n) is acquired by thefollowing equation(step 106). The unified evaluated value SVf(n)increases as the evaluated value RI(n) of the beam quantity increases.On the contrary, since the evaluated value RΔW(n) is zero or a negativevalue as described above, as the absolute value of the evaluated RΔW (n)increases, the unified evaluated value SVf(n) decreases. Symbol DI andDW are integers which represent weights. Both are generally 1, but maybe varied according to the purpose of use.

SVf(n)=DI×RI(n)+DW×RΔW(n)  (12)

The focusing voltage Vf which provides the largest evaluated valueSVf(n) is acquired (namely, selected as a solution) (step 107). Thefocusing voltage Vf produced from the focusing power source 34 iscontrolled to this value (step 108). Thus, the control of theelectrostatic lens incorporated in the accelerating tube 8 is completed.

The unified evaluated value SVf(n) is affected by not only the evaluatedvalue RI (n) of the beam quantity of the ion beam 4 but also theevaluated value RΔW (n) of the beam width which represents the size inthe direction of sweeping the ion beam. Therefore, by controlling theelectrostatic lens within the accelerating tube 8 so that the unifiedevaluated value SVf(n) is increased, i.e. controlling the focusingvoltage Vf applied to the electrostatic lens within the acceleratingtube 8, both of the beam current of the swept ion beam 4 and the size ofthe ion beam 4 in the sweeping direction can be approximated to theirpreferable state.

As a result, unlike the conventional art, it is possible to prevent theion beam from being controlled so that the spot beam current Isp′ isincreased but the beam diameter d′ is also increased, and hence Equation(7) cannot be satisfied. Namely, it is possible to prevent the beamcurrent of the swept ion beam 4 from becoming smaller than that beforethe control of the electrostatic lens within the accelerating tube 8.Thus, the purpose of acquiring the large swept beam current can beattained more surely.

Additionally, the control may be made of converging or diverging the ionbeam 4 using the trimming Q lens 10 (see FIG. 4) which is a magneticlens. In this case, the method described above may be applied to controlthe trimming Q lens 10.

The method described above can be applied to the control of the othercharged particle beam than the ion beam 4, i.e. the electronic beam inan electronic microscope.

This invention, which is configured described above, provided thefollowing effects.

In accordance with the controlling method, the unified evaluated valueis affected by not only the evaluated value of the beam quantity of thecharged particle beam but also the evaluated value of the beam widthwhich represents the size in the direction of sweeping the chargedparticle beam. Therefore, by controlling the electrostatic lens withinthe accelerating tube so that the unified evaluated value is increased,both of the beam current of the swept charged particle beam and the sizeof the charged particle beam in the sweeping direction can beapproximated to their preferable state. As a result, it is possible toprevent the beam current of the charged particle beam from becomingsmaller than that before the control of the electrostatic lens. Thus,the purpose of acquiring the large swept beam current can be attainedmore surely.

In accordance with the ion implantation apparatus, since it comprises acontrolling device having a function of implementing the abovecontrolling method and the Faraday caps, it is possible to prevent thebeam current of the swept ion beam from becoming smaller than thatbefore the control of the electrostatic lens. Thus, the purpose ofacquiring the large swept beam current can be attained more surely.

While the presently preferred embodiment of the present invention hasbeen shown and described, it is to be understood that this disclosure isfor the purpose of illustration and that various changes andmodifications may be made without departing from the scope of theinvention as set forth in the appended claims.

What is claimed is:
 1. A method for controlling a lens used in anapparatus for irradiating an object with a charged particle beam,comprising: sweeping the charged particle beam by an electric field or amagnetic field; receiving the swept charged particle beam by a Faradaycup; measuring a beam quantity of the charged particle beam and a beamwidth of the charged particle beam in a sweeping direction of thecharged particle beam; calculating a beam quantity evaluated value bydividing the measured beam quantity by a maximum beam quantity value;calculating a beam width evaluated value by dividing the differencebetween an ideal beam width value and the measured beam width by amaximum beam width value; assigning weights to the beam quantityevaluated value and the beam width evaluated value to calculate aunified evaluated value; and controlling the lens so as to increase theunified evaluated value.
 2. The method according to claim 1, whereinsaid method is effected by an ion implantation apparatus for irradiatingan object with the charged particle beam.
 3. The method according toclaim 1, wherein said method is effected by controlling an electron beamin an electron microscope.
 4. The method of claim 1, wherein controllingthe lens comprises controlling an electrostatic lens.
 5. The method ofclaim 1, wherein controlling the lens comprises controlling a magneticlens.
 6. An ion implantation apparatus for irradiating an object with anion beam comprising: a lens for converging or diverging the ion beam; asweeping unit for sweeping the ion beam passed through the lens; aFaraday cup for receiving the swept ion beam, and a controller forcontrolling the lens on the basis of a measured signal sent from theFaraday cup, wherein said controller measures a beam quantity of the ionbeam and a beam width of the ion beam in a sweeping direction of the ionbeam at the position of the Faraday cup, calculates a beam quantityevaluated value by dividing the measured beam quantity by a maximum beamquantity, calculates a beam width evaluated value by dividing thedifference between an ideal beam width value and the measured beam widthby a maximum beam width value, assigns weights to the evaluated valuesto calculate a unified evaluated value, and controls the lens so as toincrease the unified evaluated value.
 7. The ion implantation apparatusof claim 6, wherein the lens is a trimming Q lens.
 8. The ionimplantation apparatus of claim 6, comprising an accelerating tube,wherein the lens is incorporated in the accelerating tube.
 9. The ionimplantation apparatus of claim 6, wherein the lens is an electrostaticlens.
 10. The ion implantation apparatus of claim 6, wherein the lens isa magnetic lens.